SI4408DY-T1-E3
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Краткое описание:
20V 14A N-CH MOSFET SOIC N 4.5mR
Дополнительная информация
N-channel MOSFET with 20V drain-source breakdown voltage and 14A continuous drain current. Features low 4.5mΩ drain-source on-resistance and 3.5W maximum power dissipation. Surface-mount SOIC package with 26ns fall time and 60ns turn-off delay. Operates from -55°C to 150°C, RoHS compliant, and packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Nominal Vgs | 1V |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 4.5mR |
| Drain to Source Breakdown Voltage | 20V |
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