SI4410BDY-T1-E3
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N-Channel JFET, 30V, 7.5A, 13.5mR Rds(on), SOIC
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features a 30V drain-source voltage rating and a continuous drain current of 7.5A. Offers a low drain-source on-resistance of 13.5mΩ maximum. Operates within a temperature range of -55°C to 150°C. Packaged in an 8-pin SOIC surface-mount package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 5mm |
| Series | TrenchFET® |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 13.5mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| Power Dissipation | 1.4W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13.5mR |
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