SI4410BDY-T1-GE3
Снят с производства
Увеличить
Краткое описание:
N-Channel JFET, 30V, 7.5A, 13.5mR Rds On, SOP-8
Дополнительная информация
N-channel, general-purpose small-signal MOSFET with a 30V drain-source voltage and 7.5A continuous drain current. Features low 13.5mΩ drain-to-source resistance and a 1V threshold voltage. Operates across a -55°C to 150°C temperature range with a 1.4W maximum power dissipation. Packaged in a surface-mount SO-8 package, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 13.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
