SI4410DYTRPBF
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Краткое описание:
N-Ch JFET, 30V, 10A, 13.5mR, SOIC, SMT
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mount applications. Features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 10A. Offers a low Drain-Source On-Resistance (Rds On) of 13.5mR maximum. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in SOIC format on tape and reel, this lead-free and RoHS compliant component is ideal for various electronic circuits.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | HEXFET® |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 13.5mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 4000 |
| Input Capacitance | 1.585nF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 11ns |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13.5mR |
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