SI4413ADY-T1-E3
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Краткое описание:
P-CH MOSFET 30V 10.5A 7.5mR SOIC Surface Mount
Дополнительная информация
P-channel MOSFET, surface mount, in an 8-SOIC package. Features a continuous drain current of 10.5A and a drain-source voltage of -30V. Offers a low drain-source on-resistance of 7.5mR. Operates with a gate-source voltage up to 20V and a nominal Vgs of -1V. Maximum power dissipation is 1.5W, with operating temperatures from -55°C to 150°C. Includes fast switching times with a fall time of 18ns and turn-on delay of 21ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| Nominal Vgs | -1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 170ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 7.5mR |
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