SI4420BDY-T1-GE3

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SI4420BDY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-Channel JFET 30V 9.5A 8.5mR SO Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel, general-purpose small-signal MOSFET with a continuous drain current of 9.5A and a drain-to-source voltage of 30V. Features low on-resistance of 8.5mΩ, ideal for efficient switching applications. Operates across a wide temperature range from -55°C to 150°C, with fast switching speeds including a 15ns turn-on delay and 11ns fall time. Packaged in a compact SOP-8 surface-mount case, this component is halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 11ns
Packaging Tape and Reel
Rds On Max 8.5mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Max Power Dissipation 1.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.5A
Drain to Source Voltage (Vdss) 30V

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