SI4421DY-T1-E3
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Краткое описание:
P-Channel JFET, 20V, 10A, SO Package, Surface Mount
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 10A. Offers a low drain-source on-resistance (Rds On) of 8.75mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an 8-pin SO surface-mount configuration.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.75mR |
| Nominal Vgs | -800mV |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 350ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.75mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 8.75MR |
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