SI4421DY-T1-GE3
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Краткое описание:
P-Channel JFET, 20V, 10A ID, 8.75mR Rds On, SOP-8
Дополнительная информация
P-channel, 1-element silicon MOSFET for general-purpose switching applications. Features a continuous drain current of 10A and a drain-to-source voltage of -20V. Offers a low on-resistance of 8.75mΩ at a gate-to-source voltage of 8V. Packaged in an SOP-8 surface-mount package, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 170ns |
| Packaging | Tape and Reel |
| Rds On Max | 8.75mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | -800mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 350ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.75mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | -20V |
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