SI4425BDY-T1-GE3
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Краткое описание:
P-Channel JFET, 30V, 8.8A, 12mR, SO, Small Signal
Дополнительная информация
P-channel, general-purpose small-signal MOSFET with a 30V drain-source voltage and 8.8A continuous drain current. Features low 12mΩ drain-source on-resistance and operates across a -55°C to 150°C temperature range. Surface-mount SOP-8 package, 1.5W max power dissipation, and 1.55mm height. Halogen-free and RoHS compliant, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 13ns |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 30V |
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