SI4425DDY-T1-GE3
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Краткое описание:
P-CH JFET, 30V, 13A, 9.8mR Rds On, SOIC, Surface Mount
Дополнительная информация
P-channel, surface-mount MOSFET for general-purpose small signal applications. Features a continuous drain current of 13A and a drain-to-source voltage of -30V. Offers a low drain-source on-resistance of 9.8mΩ, with turn-on delay time of 12ns and fall time of 9ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 5.7W. Packaged in a 5mm x 4mm x 1.5mm SOIC package, it is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.8mR |
| Nominal Vgs | -1.2V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.61nF |
| Threshold Voltage | -1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 9.8MR |
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