SI4427BDY-T1-E3
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Краткое описание:
P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC
Дополнительная информация
P-channel JFET with 9.7A continuous drain current and -30V drain-to-source voltage. Features 10.5mΩ drain-source on-resistance, 12V gate-to-source voltage, and a -1.4V threshold voltage. This surface-mount device operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes 12ns turn-on delay and 242ns turn-off delay. Packaged in SOIC for tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 242ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 10.5mR |
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