SI4427BDY-T1-GE3
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Краткое описание:
P-Channel JFET, 30V, 9.7A ID, 10.5mR RDS(on), SOP-8
Дополнительная информация
P-channel, silicon, surface-mount field-effect transistor (FET) with a 1-element design. Features a continuous drain current (ID) of 9.7A and a drain-to-source voltage (Vdss) of -30V. Offers a low on-state resistance (Rds On) of 10.5mR. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. Packaged in SO (SOP-8) for tape and reel distribution, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 110ns |
| Packaging | Tape and Reel |
| Rds On Max | 10.5mR |
| Nominal Vgs | -1.4V |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | -600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | -30V |
| On-State Resistance | 19.5mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 242ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Voltage (Vdss) | -30V |
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