SI4430BDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 4.5mR Rds On, 14A ID, SOP-8
Дополнительная информация
N-Channel Silicon Field-Effect Transistor (FET) with 30V Drain-Source Voltage (Vdss) and 14A Continuous Drain Current (ID). Features low 4.5mΩ Drain-to-Source Resistance (Rds On Max) and a 3V Threshold Voltage. This surface-mount device, packaged in SO-8, offers fast switching with a 20ns Turn-On Delay Time and 14ns Fall Time. Operates from -55°C to 150°C with 1.6W Max Power Dissipation. HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 30V |
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