SI4431CDY-T1-E3
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Краткое описание:
P-Channel JFET, 30V Vdss, 7A ID, 32mR Rds(on), SO Package
Дополнительная информация
P-channel, 1-element silicon MOSFET for small signal applications. Features 30V drain-source voltage, 7A continuous drain current, and 32mΩ drain-source resistance. Operates from -55°C to 150°C with a maximum power dissipation of 4.2W. Packaged in an SOIC-8 surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 38ns and fall time of 11ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.006nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 38ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 4.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 30V |
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