SI4434DY-T1-GE3
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Краткое описание:
N-CH MOSFET 250V 2.1A 155mR SOIC
Дополнительная информация
N-channel MOSFET, 250V Drain-Source Voltage (Vdss), 2.1A Continuous Drain Current (ID). Features 155mΩ Drain to Source Resistance (Rds On Max) and 1.56W Max Power Dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-SOIC package, this component offers fast switching with 16ns turn-on and 19ns fall times. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 155mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 250V |
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