SI4435DDY-T1-GE3
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Краткое описание:
P-Channel JFET, 30V, 8.1A ID, 24mR Rds(on), SOP-8
Дополнительная информация
P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 8.1A and a drain-to-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 24mR, with turn-on and turn-off delay times of 42ns and 40ns respectively. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in an SOP-8 (SO) case, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SO |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 24MR |
| Drain to Source Breakdown Voltage | -30V |
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