SI4435DY
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Краткое описание:
P-Channel JFET, -30V, 8.8A, 20mR, SOIC, SMT
Дополнительная информация
P-Channel PowerTrench® MOSFET featuring a -30V Drain to Source Breakdown Voltage and a continuous drain current of 8.8A. This single-element JFET offers a low 20mΩ drain-source on-resistance and a maximum power dissipation of 2.5W. Designed for surface mounting in an SOIC package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns turn-on delay and a 25ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.57mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Nominal Vgs | -1.7V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | -8.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Input Capacitance | 1.604nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -1.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | -30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
| Drain to Source Breakdown Voltage | -30V |
