SI4436DY-T1-GE3
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Краткое описание:
60V 6.1A 36mR N-CH MOSFET SOIC N
Дополнительная информация
N-channel MOSFET, 60V drain-source voltage, 6.1A continuous drain current, and 36mΩ drain-source on-resistance. Features a 2.5V threshold voltage, 1.1nF input capacitance, and 10ns turn-on delay. Packaged in an 8-pin SOIC surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 36MR |
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