SI4442DY-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 15A ID, 4.5mR Rds(on), SO Package
Дополнительная информация
N-Channel Silicon FET, 30V Vdss, 15A continuous drain current, and 4.5mR drain-source on-resistance. This single-element field-effect transistor features a 1.5V nominal gate-source voltage and 1.5V threshold voltage. Operating from -55°C to 150°C, it offers a 1.6W maximum power dissipation and is packaged in an 8-pin SOP for surface mounting. Key switching characteristics include an 11ns fall time and 17ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.6W |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.5mR |
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