SI4442DY-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 15A 4.5mR SOIC N
Дополнительная информация
N-channel MOSFET, 30V drain-source voltage, 15A continuous drain current, and 4.5mR drain-to-source resistance. Features a 4mm width, 5mm length, and 1.55mm height in an 8-pin SOIC package for surface mounting. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 47ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 47ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 30V |
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