SI4448DY-T1-GE3
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Краткое описание:
N-CH MOSFET 12V 50A 1.7mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET, 12V Vds, 50A continuous drain current, 1.7mΩ Rds On. Features 1V threshold voltage, 8V gate-source voltage, and 3.5W max power dissipation. Surface mount SO package with 12.35nF input capacitance and 33ns fall time. Operates from -55°C to 150°C, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.7mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 12.35nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 38ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 240ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 12V |
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