SI4455DY-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 150V 2A 295mR SO Surface Mount
Дополнительная информация
The SI4455DY-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and is packaged in a SO surface mount package. The device is RoHS compliant and has a continuous drain current of 2A. It also features a drain to source resistance of 295mR and a drain to source voltage of 150V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 34ns |
| Packaging | Tape and Reel |
| Rds On Max | 295mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.19nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 295mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 150V |
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