SI4459ADY-T1-GE3
Производится
Увеличить
Краткое описание:
P-Channel MOSFET, 30V, 5mR Rds(on), 19.7A, SOIC-8
Дополнительная информация
Single P-channel MOSFET, SOIC package, featuring a 30V drain-source voltage and a low 5mΩ drain-source on-resistance. This surface-mount power MOSFET offers a continuous drain current of 19.7A and a maximum power dissipation of 7.8W. Key switching characteristics include a 16ns turn-on delay and a 20ns fall time. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5mR |
| Nominal Vgs | -2.5V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 6nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | -2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19.7A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 5MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
