SI4462DY-T1-E3
Снят с производства
Увеличить
Краткое описание:
N-CH MOSFET 200V 1.15A SOIC 17mR Rds(on)
Дополнительная информация
N-channel MOSFET with 200V drain-source breakdown voltage and 1.15A continuous drain current. Features a low 17mΩ drain-source on-resistance and 480mΩ Rds On Max. Operates across a -55°C to 150°C temperature range, with a maximum power dissipation of 1.3W. This surface-mount device is packaged in an 8-pin SOIC N, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 480mR |
| Nominal Vgs | 4V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.3W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.15A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 17mR |
| Drain to Source Breakdown Voltage | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
