SI4463BDY-T1-E3
Увеличить
Краткое описание:
P-Channel FET, 20V, 9.8A ID, 11mR Rds(on), SOIC
Дополнительная информация
P-channel, silicon, surface-mount JFET with a continuous drain current of 9.8A and a drain-source voltage of -20V. Features a low drain-source on-resistance of 11mR, ideal for switching applications. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an SOIC-8 (SO) package, this component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 11mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
