SI4463BDY-T1-GE3
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Краткое описание:
P-Channel MOSFET, 9.8A ID, 20V Vdss, 11mR Rds On, SOIC-8
Дополнительная информация
P-channel, 1-element Silicon Metal-oxide Semiconductor FET designed for surface mounting. Features a continuous drain current of 9.8A, a drain-to-source voltage of -20V, and a low on-resistance of 11mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Includes fast switching characteristics with turn-on delay time of 35ns and fall time of 75ns. Packaged in SOIC-8 (SO) for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 75ns |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Voltage (Vdss) | -20V |
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