SI4463CDY-T1-GE3
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Краткое описание:
P-Channel JFET, 49A ID, -20V Vdss, 8mR Rds On, SOIC-8
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET for surface mount applications. Features a continuous drain current of 49A and a drain-to-source voltage of -20V. Offers a low drain-source on-resistance of 8mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Includes a threshold voltage of -600mV and turn-on delay time of 12ns. Packaged in tape and reel, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 4.25nF |
| Threshold Voltage | -600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 49A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 8mR |
