SI4464DY-T1-E3
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Краткое описание:
N-Channel MOSFET, 200V, 1.7A, 240mR, SOP-8
Дополнительная информация
N-channel MOSFET for general-purpose small signal applications. Features 200V drain-to-source breakdown voltage and 1.7A continuous drain current. Offers a low 240mΩ maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C. Packaged in an 8-pin SO (SOP) surface-mount package. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Nominal Vgs | 2V |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 240mR |
| Drain to Source Breakdown Voltage | 200V |
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