SI4464DY-T1-GE3

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SI4464DY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-Channel JFET, 200V, 1.7A, 240mR, SOP-8, Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET, surface mount, in a SOP-8 package. Features 200V drain-source voltage, 1.7A continuous drain current, and 240mΩ drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes 10ns turn-on delay and 15ns fall time. Halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 240mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Number of Channels 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 240mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.7A
Drain to Source Voltage (Vdss) 200V
Drain-source On Resistance-Max 240mR

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