SI4465ADY-T1-E3
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Краткое описание:
P-CH MOSFET, -8V, 20A, 9mR Rds On, SOIC
Дополнительная информация
P-channel MOSFET with 8V drain-source voltage and 20A continuous drain current. Features 9mΩ maximum drain-source on-resistance and 3W power dissipation. Operates from -55°C to 150°C, with a 112ns fall time and 33ns turn-on delay. Surface mountable in an 8-pin SO package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 112ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 3W |
| Threshold Voltage | -450mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 33ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 168ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 6.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 9mR |
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