SI4465ADY-T1-GE3

Не рекомендуется для новых проектов
SI4465ADY-T1-GE3 - Vishay(Siliconix)
Увеличить
Краткое описание: P-CH MOSFET, 8V, 20A, 9mR, SO, Surface Mount
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

P-channel MOSFET, surface mount, in a SOP-8 package. Features a continuous drain current of 20A and a drain-to-source voltage of -8V. Offers a low on-resistance of 9mR and a threshold voltage of -450mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 3W. Halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity P-CHANNEL
Fall Time 112ns
Packaging Tape and Reel
Rds On Max 9mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Threshold Voltage -450mV
Number of Channels 1
Turn-On Delay Time 33ns
Radiation Hardening No
Turn-Off Delay Time 168ns
Reach SVHC Compliant Unknown
Max Power Dissipation 3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 9mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) -8V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.