SI4470EY-T1-E3
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Краткое описание:
60V 9A N-CH MOSFET SOIC 11mR TrenchFET
Дополнительная информация
N-channel MOSFET, surface mountable in an 8-pin SOIC package. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 9A. Offers a low 11mΩ drain-to-source resistance at a nominal 2V gate-to-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.85W. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Nominal Vgs | 2V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.85W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.85W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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