SI4472DY-T1-E3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 150V 5.5A 45mR SOIC
Дополнительная информация
N-channel MOSFET with 150V drain-source voltage (Vdss) and 5.5A continuous drain current (ID). Features a low 45mΩ maximum drain-source on-resistance (Rds On Max) and a 5.9W maximum power dissipation. Operates across a temperature range of -55°C to 150°C. Packaged in an 8-SOIC surface-mount package, this component offers fast switching with turn-on delay time of 16ns and fall time of 7ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.735nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 5.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 45mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
