SI4483ADY-T1-GE3
Увеличить
Краткое описание:
P-Channel JFET, SOIC, -30V Vdss, 8.8mR Rds On, 13.5A ID
Дополнительная информация
P-channel JFET with 13.5A continuous drain current and 8.8mΩ drain-source on-resistance. Features -30V drain-to-source voltage and 25V gate-to-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 5.9W. Surface mount SOIC package with 3.9nF input capacitance. HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.8mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.9nF |
| Threshold Voltage | -2.1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 70ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.8mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 8.8mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
