SI4484EY
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Краткое описание:
N-CH MOSFET 100V 6.9A 34mR SO
Дополнительная информация
N-channel MOSFET with 100V drain-source breakdown voltage and 6.9A continuous drain current. Features low 34mΩ drain-to-source resistance and 3.8W power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in SO, this component offers fast switching with turn-on delay of 16ns and fall time of 10ns.
| RoHS | Not Compliant |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.002998oz |
| Current | 46A |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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