SI4484EY-T1-E3
Снят с производства
Увеличить
Краткое описание:
N-Channel JFET, 100V, 6.9A, 34mR Rds On, SO Package
Дополнительная информация
N-Channel MOSFET, designed for small signal applications, features a 100V Drain to Source Breakdown Voltage and 100V Drain to Source Voltage (Vdss). This surface mount device offers a low Drain-source On Resistance of 34mR (Rds On Max) and a continuous drain current capability of 6.9A. Operating within a temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 16ns turn-on delay and 10ns fall time. The component is housed in an SO package, is RoHS compliant, and supports a maximum power dissipation of 1.8W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Nominal Vgs | 2V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 34mR |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
