SI4485DY-T1-GE3
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Краткое описание:
P-Channel JFET, 30V, 5.9A ID, 42mR Rds(on), SOP-8
Дополнительная информация
P-channel JFET with 30V drain-source voltage and 5.9A continuous drain current. Features low 35mΩ drain-source resistance and 42mΩ max Rds(on). Operates from -55°C to 150°C with 5W max power dissipation. Surface mountable in an 8-pin SO package, this silicon FET offers 8ns turn-on and 18ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Nominal Vgs | -1.2V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 590pF |
| Power Dissipation | 2.4W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 42mR |
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