SI4486EY-T1-E3
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Краткое описание:
N-Channel MOSFET, 100V, 7.9A, 25mR, SO, Surface Mount
Дополнительная информация
N-channel power MOSFET with 100V drain-source breakdown voltage and 25mΩ maximum drain-source on-resistance. Features 7.9A continuous drain current and 1.8W maximum power dissipation. This surface-mount device operates from -55°C to 175°C and is packaged in tape and reel. Compliant with RoHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 2V |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 3.8W |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 100V |
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