SI4488DY-T1-E3
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Краткое описание:
N-CH MOSFET, 150V, 3.5A, 50mR Rds On, SOP-8
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features a 150V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.5A. Offers a low drain-source on-resistance (Rds On) of 50mR. Operates within a temperature range of -55°C to 150°C. Packaged in an 8-pin SO (SOP) surface-mount package, this RoHS-compliant component boasts fast switching times with a turn-on delay of 12ns and a fall time of 7ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Nominal Vgs | 2V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.56W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 50mR |
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