SI4488DY-T1-GE3

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SI4488DY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 150V 3.5A 50mR SO Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-CHANNEL MOSFET, 150V Drain-Source Voltage (Vdss), 3.5A Continuous Drain Current (ID), and 50mΩ Drain-Source Resistance (Rds On Max). This surface-mount component features a 2V Threshold Voltage and a 10ns Fall Time, with Turn-On and Turn-Off Delay Times of 12ns and 22ns respectively. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.56W.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.01787oz
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 50mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Threshold Voltage 2V
Number of Channels 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Reach SVHC Compliant No
Max Power Dissipation 1.56W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 50mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.5A
Drain to Source Voltage (Vdss) 150V

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