SI4490DY-T1-GE3
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Краткое описание:
N-Channel JFET, 200V, 2.85A, 80mR Rds(on), SOP-8
Дополнительная информация
N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features a continuous drain current of 2.85A and a drain-to-source voltage of 200V. Offers a low drain-source on-resistance (Rds On) of 80mR. Packaged in a compact SOP-8 surface-mount package, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.85A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 80mR |
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