SI4497DY-T1-GE3
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Краткое описание:
P-CH MOSFET, -30V, -36A, 3.3mR, SOIC
Дополнительная информация
P-Channel MOSFET, 30V Drain-Source Voltage, -36A Continuous Drain Current, and 3.3mΩ Max Drain-Source On-Resistance. Features a 150°C Max Operating Temperature, 7.8W Max Power Dissipation, and 9.685nF Input Capacitance. Surface mountable in an 8-SOIC package, this component offers 19ns Turn-On Delay Time and 115ns Turn-Off Delay Time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| Nominal Vgs | -1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 9.685nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | -2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -36A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 3.3mR |
