SI4532CDY-T1-GE3
Увеличить
Краткое описание:
N/P-Channel JFET, 30V, 6A, SOIC, 2-Element
Дополнительная информация
Surface mount N-channel and P-channel JFET with 30V drain-source voltage and 6A continuous drain current. Features include a 1V threshold voltage, 89mR maximum drain-source on-resistance, and 305pF input capacitance. Operates across a -55°C to 150°C temperature range with 2.78W maximum power dissipation. This 2-element device is packaged in a SOIC case and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 7.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 47mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 305pF |
| Power Dissipation | 1.78W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 5.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 73mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 89mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
