SI4542DY
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Краткое описание:
30V 7A N/P-CH MOSFET SOIC 2-CH 2W 32mR
Дополнительная информация
N-channel and P-channel MOSFET transistor in SOIC package, featuring 30V drain-to-source breakdown voltage and 6.9A continuous drain current. Offers low on-state resistance of 32mR at 10V, with a 2W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching times including 10ns turn-on delay and 25ns fall time. This surface-mount device is designed for efficient power management applications.
| RoHS | Not Compliant |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 7A |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
| Package Quantity | 100 |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| On-State Resistance | 25mR |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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