SI4559ADY-T1-GE3
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Краткое описание:
2-Ch N/P-Ch MOSFET 60V 3.9A 58mR SO Surface Mount
Дополнительная информация
Dual-channel N-channel and P-channel power MOSFET for general-purpose applications. Features a 60V drain-source voltage and a maximum continuous drain current of 3.9A. Offers a low on-resistance of 58mΩ at a 10V gate-source voltage. Packaged in a surface-mount SOIC-8 package, this component is halogen-free and RoHS compliant, operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 665pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 3.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 58MR |
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