SI4563DY-T1-E3
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Краткое описание:
N/P-Channel JFET, 40V, 8A, 2-Ch, SO, Surface Mount
Дополнительная информация
N-Channel and P-Channel Silicon FET, 2-Element, Surface Mount, SOP-8 package. Features 40V Drain to Source Voltage (Vdss), 8A Continuous Drain Current (ID), and low Drain-source On Resistance (Rds On) up to 16mR. Operates from -55°C to 150°C with a 2W Max Power Dissipation. Includes 69ns Fall Time and 33ns Turn-On Delay Time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 69ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.39nF |
| Threshold Voltage | 2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 33ns |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 25mR |
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