SI4620DY-T1-E3

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SI4620DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 6A 35mR SO Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 30V drain-source voltage, 6A continuous drain current, and 35mΩ drain-to-source resistance at 10V Vgs. Features 3.1W maximum power dissipation, 1.04nF input capacitance, and 17ns fall time. Operates from -55°C to 150°C, packaged in SO surface-mount format on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series LITTLE FOOT®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 17ns
Packaging Tape and Reel
Rds On Max 35mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.04nF
Number of Channels 1
Turn-On Delay Time 16ns
Radiation Hardening No
Turn-Off Delay Time 21ns
Max Power Dissipation 3.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 35mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 30V

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