SI4626ADY-T1-E3

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SI4626ADY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 21.5A 3.3mR SO Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-CHANNEL MOSFET, 30V Vdss, 21.5A Continuous Drain Current, 3.3mR Rds On @ 10V. Features 6.0W Max Power Dissipation, 150°C Max Operating Temperature, and 3.3mR Drain to Source Resistance. Surface mount SO package with 5mm length, 4mm width, and 1.55mm height. Includes 44ns Turn-On Delay, 45ns Turn-Off Delay, and 18ns Fall Time.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 18ns
Packaging Tape and Reel
Rds On Max 3.3mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 5.37nF
Number of Channels 1
Turn-On Delay Time 44ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Max Power Dissipation 6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21.5A
Drain to Source Voltage (Vdss) 30V

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