SI4626ADY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 21.5A ID, 3.3mR Rds(on), SO Package
Дополнительная информация
N-Channel Silicon TrenchFET® MOSFET, surface mount, featuring 30V drain-source voltage and 21.5A continuous drain current. Offers low 3.3mΩ drain-to-source resistance (Rds On Max) and 6W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SO-8, tape and reel, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 5.37nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 44ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21.5A |
| Drain to Source Voltage (Vdss) | 30V |
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