SI4628DY-T1-GE3
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Краткое описание:
N-Channel JFET, 38A ID, 30V Vdss, 3mR Rds(on), SO Package
Дополнительная информация
N-Channel Silicon Field-Effect Transistor (FET) designed for small signal applications. Features a 30V Drain-Source Voltage (Vdss) and a maximum continuous drain current of 38A. Offers a low Drain-Source On-Resistance (Rds On) of 3mR. Operates within a temperature range of -55°C to 150°C and supports both through-hole and surface mount configurations. Packaged in a compact SOP-8 (SO) format.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SkyFET®, TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.45nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3mR |
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